d a t a sh eet product speci?cation supersedes data of september 1994 file under discrete semiconductors, sc04 1997 jan 29 discrete semiconductors bcw31; bcw32; bcw33 npn general purpose transistors o k, halfpage m3d088
1997 jan 29 2 philips semiconductors product speci?cation npn general purpose transistors bcw31; bcw32; bcw33 features low current (100 ma) low voltage (32 v). applications general purpose switching and amplification. description npn transistors in a plastic sot23 package. pnp complements: bcw29 and bcw30. pinning pin description 1 base 2 emitter 3 collector fig.1 simplified outline (sot23) and symbol. handbook, halfpage 2 1 3 mam255 top view 2 3 1 marking type number marking code bcw31 d1p bcw32 d2p bcw33 d3p quick reference data symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 32 v v ceo collector-emitter voltage open base - 32 v i cm peak collector current - 200 ma p tot total power dissipation t amb 25 c - 250 mw h fe dc current gain i c = 2 ma; v ce =5v bcw31 110 220 bcw32 200 450 bcw33 420 800 f t transition frequency i c = 10 ma; v ce = 5 v; f = 100 mhz 100 - mhz
1997 jan 29 3 philips semiconductors product speci?cation npn general purpose transistors bcw31; bcw32; bcw33 limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics note 1. transistor mounted on an fr4 printed-circuit. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 32 v v ceo collector-emitter voltage open base; i c =2ma - 32 v v ebo emitter-base voltage open collector - 5v i c collector current (dc) - 100 ma i cm peak collector current - 200 ma i bm peak base current - 200 ma p tot total power dissipation t amb 25 c - 250 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient note 1 500 k/w
1997 jan 29 4 philips semiconductors product speci?cation npn general purpose transistors bcw31; bcw32; bcw33 characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit i cbo collector cut-off current i e = 0; v cb =32v -- 100 na i e = 0; v cb = 32 v; t j = 100 c -- 10 m a i ebo emitter cut-off current i c = 0; v eb =5v -- 100 na h fe dc current gain i c =10 m a; v ce =5v bcw31 - 90 - bcw32 - 150 - bcw33 - 270 - h fe dc current gain i c = 2 ma; v ce =5v bcw31 110 - 220 bcw32 200 - 450 bcw33 420 - 800 v cesat collector-emitter saturation voltage i c = 10 ma; i b = 0.5 ma - 120 250 mv i c = 50 ma; i b = 2.5 ma - 210 - mv v besat base-emitter saturation voltage i c = 10 ma; i b = 0.5 ma - 750 - mv i c = 50 ma; i b = 2.5 ma - 850 - mv v be base-emitter voltage i c = 2 ma; v ce = 5 v 550 - 700 mv c c collector capacitance i e =i e = 0; v cb =10v; f=1mhz - 2.5 - pf f t transition frequency i c = 10 ma; v ce = 5 v; f = 100 mhz 100 -- mhz f noise ?gure i c = 200 m a; v ce =5v; r s =2k w ; f = 1 khz; b = 200 hz -- 10 db
1997 jan 29 5 philips semiconductors product speci?cation npn general purpose transistors bcw31; bcw32; bcw33 package outline unit a 1
max. b p cd e e 1 h e l p qw v references outline
version european
projection issue date iec jedec eiaj mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95 e 1.9 2.5
2.1 0.55
0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45
0.15 sot23
b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1
0.9 c x 12 3 package description sot23
1997 jan 29 6 philips semiconductors product speci?cation npn general purpose transistors bcw31; bcw32; bcw33 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1997 jan 29 7 philips semiconductors product speci?cation npn general purpose transistors bcw31; bcw32; bcw33 notes
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